TDMGe

(abbreviation) . the metalorganic source for Germanium Nitride (GeN) in MOCVD of semiconductors. It grows GeN instead of Ge, and is used at either high temperatures (600-800 C) or with plasma because of its very low vapor pressure and higher decomposition temperature. Also known as '''TDMAGe''' and pronounced as T-Damage.

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This entry was last updated on RefTopia from its source on 3/20/2012.